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automotive datasheet high current profet tm v1.1, 2011-08-16 bts50070-1ega smart high-side power switch one channel, 7 m high current profet tm
datasheet 2 v1.1, 2011-08-16 high current profet tm smart high-side power switch bts50070-1ega 1 overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 block diagram and terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.2 terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3.1 pin assignment bts50070-1ega . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3.2 pin definitions and functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 general product characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4.1 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4.2 functional range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.3 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.4 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 power stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5.1 input circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5.2 output on-state resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5.3 output timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5.4 switching losses for resistive loads . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.5 output inductive clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.6 inverse operation capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 5.7 undervoltage shutdown and restart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 5.8 electrical characteristics: po wer stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 protection functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6.1 short circuit protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6.2 short circuit impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6.3 over temperature protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6.4 infineon? intelligent latch - fault acknowledge and latch reset . . . . . . . . . . . . . . . . . . . . . . . . 19 6.5 reverse polarity protection - reversave tm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6.6 esd protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 6.7 loss of ground protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 6.8 loss of load protection, loss of vbb protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 6.9 electrical characteristics: protection functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 7 diagnostic functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 7.1 diagnosis enable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 7.2 diagnosis during on . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 7.3 diagnosis during off . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 7.4 diagnosis disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 7.5 electrical characteristics: diagnostic functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 8 application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 8.1 hints for pcb layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 8.2 further application informat ion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 9 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 10 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
pg-dso-12-16 type package marking bts50070-1ega pg-dso-12-16 bts 50070a datasheet 3 v1.1, 2011-08-16 high current profet tm smart high-side power switch one channel, 7 m bts50070-1ega 1overview features ? part of scalable product family ? 3.3 and 5v compatible, ground referenced cmos compatible inputs ? optimized electromagnetic compatibility (emc) ? very low standby current ? stable behavior at under-voltage ? secure load turn-off while device ground disconnected ? reversave tm - reverse battery protection without external components ? inverse load current capability ?infineon ? intelligent latch ? green product (rohs compliant) ? aec qualified description the bts50070-1ega is a single channel high-side power switch in pg-dso-12-16 package providing embedded protective functions including reversave tm and infineon ? intelligent latch. the power transistor is built by a n-channel vertical power mosfet with charge pump. the design is based on smart power chip on chip technology. the bts50070-1ega has ground referenced cmos compatible inputs. reversave tm is a protection feature that causes the power transi stor to switch on in ca se of reverse polarity. as a result, the power dissipation is reduced. infineon ? intelligent latch ensures a latched switch-off and reporting in case of fault condition. the infineon ? enhanced sense pin is provides a sophisticate d diagnostic feedback signal including current sense functionality, ope n load in on-state (via sense signal) and open load and short to battery in off-state. diagnostic reporting can be enabled and disabled by the den-pin in on-state and off-state. in off-state, open load detection can also be disabled by th e den-pin to optimize stand-by current. extended operating voltage range v bb(ext) 6..28v minimum power stage over-voltage protection v ds(cl) 42 v typical on-state resistance at t j = 25c r ds(on) 7m maximum on-state resistance at t j = 150c r ds(on) 14 m typical nominal load current i l(nom) 14 a minimum short circuit shutdown threshold (sct) i l(sc)high 90 a maximum stand-by current for whole device with load for t j 85c i bb(off) 10 a
datasheet 4 v1.1, 2011-08-16 high current profet tm smart high-side power switch bts50070-1ega overview protective functions ? short circuit protection with latch ? thermal shutdown with latch ?infineon ? intelligent latch - rese t able latch resulting fr om protective switch-off ? reversave tm - reverse battery protection by self turn on of power mosfet ? inverse load current capabilit y - inverse operation function ? under voltage shutdown with restart ? over voltage protection (including load dump) ? loss of ground protection ? loss of v bb protection (with external diode for charged inductive loads) ? electrostatic discha rge protection (esd) diagnostic functions ? enable function for diagnosis and reporting ? provides capability for muliplexing of the reporting si gnal from multiple devices by den pin. in on-state: ? provides analog sense signal of load current in normal operation mode ? provides defined fault current signal in case of ov erload, over temperature and short circuit to ground ? open load detection in on-state by load current sense in off-state: ? open load and short to battery detection applications ? c compatible high-side power switch with di agnostic feedback for 12 v system grounded loads ? all types of resistive, in ductive and capacitive loads ? most suitable for loads with high inrush curren ts, such as glow plugs, ptc heaters, or lamps ? replaces electromechanical relays, fuses and discrete circuits
datasheet 5 v1.1, 2011-08-16 high current profet tm smart high-side power switch bts50070-1ega block diagram and terms 2 block diagram and terms 2.1 block diagram figure 1 block diagram 2.2 terms figure 2 terms ov erv i ew. emf control chip base chip v bb out in t driver logic gate control & charge pump load current sense over temperature clamp for inductive load over current switch-off open load detection @off voltage sensor gnd esd protection is den internal power supply ter m s . em f v in out v bb v out i bb in vbb v ds or v on or v off r is i in i gnd gnd is i is i l v bis v is den v den i den
datasheet 6 v1.1, 2011-08-16 high current profet tm smart high-side power switch bts50070-1ega pin configuration 3 pin configuration 3.1 pin assignment bts50070-1ega figure 3 pin configuration 3.2 pin definitions and functions pin symbol i/o function 1 gnd - ground connection for control chip 2 in i input: activates power switch. has an internal pull down resistor. 3 is o sense output: with diagnosis enabled, pr ovides a sense current proportional to the load current during normal operation. during open load in on provides no current. provides a defined fault current in case of overload, over temperature or short circuit during on or open load or short to battery during off (see table 1 ?truth table? on page 24 ) 4 den i diagnosis enable: with high level enables diagnosis reporting and open load / short to battery detection in off. resets a protecti ve, latched switch -off by falling edge acknowledgement. has an internal pull down resistor. 5, 6, 7, 12 nc - not connected. for recommendation on handling the nc pins, please see chapter 8.1 . 8, 9, 10, 11 out o output: output to the load; pins 8 to 11 must be externally shorted together 1) 1) not shorting all output pins will considerably increase th e on-state resistance, reduce the peak current capability, the clamping capability and decrease the current sense accuracy. heatslug v bb - supply voltage: positive power supply for logic and output pdso1 2 . e m f (top view) out out out out nc nc 12 11 10 9 8 7 in is gnd nc 1 2 3 4 5 6 heatslug (v bb ) nc den
datasheet 7 v1.1, 2011-08-16 high current profet tm smart high-side power switch bts50070-1ega general product characteristics 4 general product characteristics 4.1 absolute maximum ratings operation outside the parameters listed here may caus e permanent damage to the dev ice. exposure to maximum rating conditions for extended periods may a ffect device reliability absolute maximum ratings 1) tj = -40 c to +150 c (unless otherwise specified) 1) not subject to production test, specified by design. pos. parameter symbol limit values unit conditions min. max. supply voltage 4.1.1 supply voltage v bb 042v 4.1.2 reverse polarity voltage - v bb(rev) 016v t j = 25 c 2) 2) t 2min 4.1.3 supply voltage for sh ort circuit protection (single pulse) v bat(sc) 028v 3) 4.1.4 supply voltage for load dump protection v bb(ld) -42v r i = 2 4) , r l = 1 t d =400 ms t j = 25 c input pins 4.1.5 voltage at in pin v in -0.3 6 v - 4.1.6 current through in pin i in -2 2 ma 2) 4.1.7 voltage at den pin v den -0.3 6 v - 4.1.8 current through den pin i den -2 2 ma 2) output pins 4.1.9 voltage at sense pin v is -0.3 v zis v- 4.1.10 current through sense pin is i is -10 2)5) 10 ma - power stages 4.1.11 load current 6) | i l |- i l(sc) a- 4.1.12 inductive load switch-off energy (single pulse) e as -145mj v bb =13.5v 7) , i l(0) = 50a, t j(0) 150 c 4.1.13 inductive load switch-off energy (repetitive pulses) e ar -71mj v bb =13.5v 7)8) , i l(0) = 20a, t j(0) 105 c temperatures 4.1.14 junction temperature t j -40 150 c - 4.1.15 dynamic temperature increase while switching t j -60k- 4.1.16 storage temperature t stg -55 150 c - esd susceptibility 4.1.17 esd susceptibility hbm in, den, is, v bb , out v bb versus out v esd -2 -4 2 4 kv according to eia/jesd 22-a 114b
datasheet 8 v1.1, 2011-08-16 high current profet tm smart high-side power switch bts50070-1ega general product characteristics note: stresses above the ones listed here may cause perm anent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. note: integrated protection functions are designed to prevent ic destruction under fault conditions described in the data sheet. fault conditions are considered as ?outside? normal operating range. protection functions are not designed for continuous repetitive operation. 4.2 functional range note: within the functional or operating range, the ic operat es as described in the circuit description. the electrical characteristics are specif ied within the conditions given in th e electrical char acteristics table. 3) short circuit is defined as a combination of remaining resistances and inductances. see figure 15 . 4) v bb(ld) is setup without the dut connected to th e generator per iso 7637-1 and din 40839. r i is the internal resistance of the load dump pulse generator 5) valid at disabled diagnosis. 6) over current threshold switch -off is a protection feature. protection features are not des igned for continuous repetitive operation. 7) see also chapter 5.5 . 8) resuls from simulation of temperature swing. no t subject to production test, specified by design. pos. parameter symbol limit values unit conditions min. max. supply voltage 4.2.1 supply voltage range for normal operation v bb(nor) 916v- 4.2.2 extended supply voltage range for operation v bb(ext) 628 1) 1) not subject to production test, specified by design v 2) 2) in extended supply voltage range, the device is functi onal but electrical parameters are not specified. 4.2.3 operating current v in =0v, v ds > v ds(ol) v in =5v i gnd - - 4 24 ma v den =5v, v is <5.5v, v bb = v bb(nor) 4.2.4 load current range for sense functionality 1) i l(is) 1.5 59 a i is - i is(lh) >30a, i is(lim) > i is , v bb = v bb(nor) , v in = v den =5v, v bis >5v 4.2.5 junction temperature t j -40 150 c -
datasheet 9 v1.1, 2011-08-16 high current profet tm smart high-side power switch bts50070-1ega general product characteristics 4.3 thermal resistance figure 4 shows the typical transient thermal impedance of bts50070-1ega . figure 4 transient thermal impedance z th(ja) =f( t p ) 4) 4.4 package pos. parameter symbol limit values unit conditions min. typ. max. 4.3.1 junction to case 1) 1) not subject to production test, specified by design r thjc --1.3k/w 2) 2) specified r thjc value is simulated at natural convection on a cold plate setup. t a = 25 c. 4.3.2 control chip to case 1) r thj(cc)c -40-k/w 3) 3) specified r thj(cc)c value is simulated at natural co nvection on a cold plate setup. t a = 25 c, i l = 0a. 4.3.3 junction to ambient 1) device on pcb 4) 4) specified r thja value and figure 4 are according jedec jesd51_7 at natural convection on fr4 2s2p board. the bts50070-1ega was measured on a 76.2 x 114.3 x 1.6 mm board with 2 inner copper layers (2 x 70m cu, 2 x 35m cu) applying power losses of 1.4w at the channel. according to jesd51-5 a thermal via array und er the exposed pad contacted the first inner copper layer. t a = 25 c. r thja -27- k/w ? pos. parameter value test conditions 4.4.1 jedec humidity catego ry acc. j-std-020-d msl3 - 4.4.2 jedec classification temperature acc. j-std-020-d 260c -
datasheet 10 v1.1, 2011-08-16 high current profet tm smart high-side power switch bts50070-1ega power stages 5 power stages the power stage is built by a n-channel vertic al power mosfet (dmos) with charge pump. 5.1 input circuit figure 5 shows the input circuit of the bts50070-1ega. the in put resistor to ground ensures that the input signal is low in case of open input pin. the zener diod e protects the input circuit against esd pulses. figure 5 input circuit a high signal at the input pin causes the dmos to switch on. 5.2 output on-state resistance the on-state resistance r ds(on) depends on the supply voltage v bb and the junction temperature t j . figure 6 shows these dependencies for the typical on-state resistance . the on-state resistance in reverse polarity mode is described in chapter 6.5 . figure 6 typical on-state resistance 5.3 output timing the power stage is designed for high side configuration ( figure 9 ). input.emf in gnd r in 0 2,5 5 7,5 10 12,5 -40 0 40 80 120 160 r ds(on) m t j typ. c j = 25c v bb = 13.5 v
datasheet 11 v1.1, 2011-08-16 high current profet tm smart high-side power switch bts50070-1ega power stages the power stage has a defined switching behavior. define d slew rates as well as edge shaping support pwm?ing of the load while achieving lowest emc emission at minimum switching losses. figure 7 switching a load (resistive) 5.4 switching losses fo r resistive loads switching the device on and off may cause switching losses e on and e off . in case of a resistive load, the switching losses depend on the supply voltage v bb as well as on the load current i l and the junction temperature t j . figure 8 shows this dependencies of the switching losses. switchon.emf v out t t v in 10% 30% 50% 90% t on t off (d v / d t ) on (d v / d t ) off t r t f v in (h ),min v in(l ),ma x t i bb i bb(off) t standby
datasheet 12 v1.1, 2011-08-16 high current profet tm smart high-side power switch bts50070-1ega power stages figure 8 typical switching losses e on and e off 5.5 output inductive clamp when switching off inductive loads, the output voltage v out drops below ground potential due to the inductive properties of the load ( -d i l /dt = -v l /l ; - v out ? -v l ). 0,1 1 10 100 0,1 1 10 r l e on, e off mj e off e on typ., t j = 25c, v bb = 13.5v 0 5 10 15 20 25 30 0 5 10 15 20 25 30 v bb e on, e off mj v e off e on typ., t j = 25c, r l = 1 0 1 2 3 4 -50 0 50 100 150 t j e on, e off mj c e off e on typ., v bb =13.5v, r l = 1
datasheet 13 v1.1, 2011-08-16 high current profet tm smart high-side power switch bts50070-1ega power stages figure 9 output clamp to prevent destruction of th e device, there is a voltage clamp mechanis m implemented that keeps the voltage drop across the device at a certain level. at nomi nal battery voltage the output is clamped to v out(cl) . at over voltages the output is clamped to v ds(cl) . see figure 9 and figure 10 for details. the maximum allowed load inductance is limited. figure 10 switching an inductance maximum load inductance while de-energizing inductive loads, energy has to be dissipated in the bts50070-1ega. this energy can be calculated by the following equation: in the event of de-energizing very low ohmic inductances ( r l 0) the following, simplified equation can be used: the energy, which is converted in to heat, is limited by the thermal design of the component. see figure 11 for the maximum allowed energy dissipation. out put clamp. emf control chip base chip v ds(cl) load gnd out vbb v bb charge pu mp v out i l v out i nduct iveload. emf t i l t v out(cl) v bb on off v ds( cl ) v bb v bb v out v out(cl) v ds( cl ) ev bb v out cl () + () v out cl () ? r l ------------------------------ - ln ? 1 r l i l ? v out(cl) ------------------------- + ?? ?? ?? i l + l r l ------ - ?? = e 1 2 -- - li l 2 v ds(cl) v ds(cl) v bb ? ------------------------------------- ? =
datasheet 14 v1.1, 2011-08-16 high current profet tm smart high-side power switch bts50070-1ega power stages figure 11 maximum energy dissipation 1) 2) note: clamping overrides all protection functionalities. in order to avoid device destruct ion resulting from inductive switch-off or over voltage the device has to be operated within the maximum ratings. 5.6 inverse operation capability the bts50070-1ega can be operated in inverse load current condition (+ v out > + v bb ). the device can not block the current flow during inverse mode. in on condition a voltage drop across the activated channel of - v on(inv) = r on(inv) *(- i l ) can be observed. 1) not subject to production test, specified by design. 2) resuls for e ar from simulation of temperature swing. t j(0) = 150c, v bb = 13.5v t j(0) = 105c, v bb = 13.5v t j(0) = 150c, v bb = 13.5v t j(0) = 105c, v bb = 13.5v
datasheet 15 v1.1, 2011-08-16 high current profet tm smart high-side power switch bts50070-1ega power stages in off condition a voltage drop across the intrinsic body diode of - v off(inv) =f(- i l ) can be observed. as long as the inverse current does not exceed |- i l | | -i l(inv) | the logic will operate and report according table 1 and the bts50070 -1ega will be able to remain in on mode. figure 12 inverse current capability note: activation of any prot ection mechanism will not bloc k the current flow. over temperature de tection and current sense is not func tional during inverse mode. 5.7 undervoltage shutdown and restart the bts50070-1ega is supplied by v bb . the internal logic permanently monitors the supply voltage v bb . in the event that the supply voltage drops belo w the under voltage shutdown threshold v bb(u) , the bts50070-1ega will switch off. if the supply voltage re aches nominal operating voltage range v bb(ext) , the bts50070-1ega will switch on after a delay t delay(uv) , assuming v in =high. protective latch is reset by undervoltage shutdown. figure 13 undervoltage shutdown and restart i nverse_capabilit y. emf - i l +v bb control chip base chip v on(inv) gnd out vbb v bb lo gi c + - undervoltage.emf v bb t v out t delay(uv) on v bb(u) z t v bb(ext)
datasheet 16 v1.1, 2011-08-16 high current profet tm smart high-side power switch bts50070-1ega power stages 5.8 electrical characteristics: power stages note: characteristics show the deviat ion of parameters at the given supply voltage and junction temperature. typical values show the typical param eters expected from manufacturing. v bb = 9 v to 16 v, t j = -40 c to +150 c (unless otherwise specified) typical values: v bb = 13.5 v, t j = 25 c pos. parameter symbol limit values unit conditions min. typ. max. general 5.8.1 stand-by current t j = -40 c, t j = 25 c t j 85 c 1) t j = 150 c i bb(off) - - - 6 6 16 10 10 50 a 2) , | v in |=| v den | 0.3v 3) , v out = v is =0v, t > t standby , no fault condition 5.8.2 stand-by time 1) 2) t standby -0.51ms| v in |=| v den | 0.3v, v out = v is =0v 5.8.3 undervoltage shutdown 1) v bb(u) -5.76v- 5.8.4 undervoltage recovery time 1) t delay(uv) -10-ms- input characteristics 5.8.5 l-input level v in(l) -0.3 - 1.0 v - 5.8.6 h-input level v in(h) 2.0 - 5.5 v - 5.8.7 input hysteresis v in(hys) -100-mv 1) 5.8.8 input pull down resistor r in 50 100 200 k - output characteristics 5.8.9 on-state resistance t j =25 c t j =150 c v bb =6v, t j =25 c v bb =6v, t j =150 c r ds(on) - - - - 7 10 9.5 11.5 - 14 - 23.5 m v in =5v, i l =20a 5.8.10 nominal load current 1)4) i l(nom) -14-a t a = 85 c t j 150 c 5.8.11 output leakage current i l(off) -330a v in = v den =0v, v out =0v 5.8.12 output clamp during switch-off - v out(cl) 16 18 20 v v out v bb ? v ds(cl) 5) , i l = 40 ma 16 20 25 v v out v bb ? v ds(cl) 5) , i l = 20 a 1) 5.8.13 output clamp during over voltage v ds(cl) 42 50 - v v ds v bb - v out(cl) 5) , i l =40ma 42 51 - v v ds v bb - v out(cl) 5) , i l = 20 a 1) 5.8.14 switch-on energy 5 n 95% v out e on -35mj v bb = 13.5 v, r l = 1 5.8.15 switch-off energy 95 p 5% v out e off -3.55mj 5.8.16 inverse operation on-state resistance t j =25c t j =150c r on(inv) - - 7 10 - 14 m v in = 5 v, i l = -20 a, no protective switch-off
datasheet 17 v1.1, 2011-08-16 high current profet tm smart high-side power switch bts50070-1ega power stages 5.8.17 inverse operation output voltage drop t j =25c t j =150c - v off(inv) - - 700 400 900 800 mv v in =0v, i l = -10 a 5.8.18 inverse cu rrent capability 1) - i l(inv) 20 - - a - timings 5.8.19 turn-on time to 90% v out t on -200350 s v bb = 13.5 v r l = 1 5.8.20 turn-off time to 10% v out t off -200350 s v bb = 13.5 v r l = 1 5.8.21 slew rate on 30 n 50% v out (d v / d t ) on 0.1 0.15 0.21 v/s v bb = 13.5 v r l = 1 5.8.22 slew rate off 50 p 30% v out -(d v / d t ) off 0.1 0.15 0.21 v/s v bb = 13.5 v r l = 1 1) not subject to production test, specified by design 2) in case of protective switch-off standby is only reached if the fault was acknowledged while in=low by den=high p low and t standby expired. see also chapter 6.4 for details. 3) tested at v in = v den =0v only 4) according jesd51_7, fr4 2s2p board, 76.2 x 114.3 x 1.6 mm, 2x70m cu, 2x35m cu. 5) see figure 10 . v bb = 9 v to 16 v, t j = -40 c to +150 c (unless otherwise specified) typical values: v bb = 13.5 v, t j = 25 c pos. parameter symbol limit values unit conditions min. typ. max.
datasheet 18 v1.1, 2011-08-16 high current profet tm smart high-side power switch bts50070-1ega protection functions 6 protection functions the bts50070-1ega provides embedded protective functions. in tegrated protection functions are designed to prevent ic destruction under fault conditions described in the data sheet. fault conditions are considered as ?outside? normal operating range. protection functi ons are neither designed for continuous nor repetitive operation. 6.1 short circuit protection the internal logic permanently monitors the load current i l . in the event the load current exceeds the short circuit shutdown threshold ( i l > i l(sc) ), the device will switch off immediately. an y protective switch off latches the output. please refer to figure 14 for details. the protective switch off remain s latched until the fault is acknowledged and reset by a falling edge at the den pin. see also chapter 6.4 . figure 14 shutdown by short circuit current detection before switching on, the device is measuring the battery voltage v bb(0) . in case v bb(0) is above v bb(sct) , the short circuit current threshold i l(sc)high is reduced to a lower level i l(sc)low . note: in case of a short circuit between out and ground, an impedance between v bat and v bb pin of the device (see figure 15 ) may cause the device?s supply voltage to drop below v bb(u) before short circuit shutdown threshold is reache d. in that case, the device will detect an u ndervoltage condition an d behave as described in chapter 5.7 . 6.2 short circuit impedance the capability to handle single short circuit events depends on the battery voltage as well as on the primary and secondary short impedance. figure 15 outlines allowable combinations for a single short circuit event of maximum, secondary inductance for given secondary resistance. i_l(sc)_detect .emf t i l v in t i l(sc) v den t latch reset latch reset latch reset reset latch latch
datasheet 19 v1.1, 2011-08-16 high current profet tm smart high-side power switch bts50070-1ega protection functions figure 15 short circuit 6.3 over temperature protection the internal logic permanently monitors the junction temperature of the output stage. in the event of an over temperature ( t j > t jt ) the output will switch off imme diately. please refer to figure 16 for details.the protective switch off remains latched until the fa ult is acknowledged and reset by a falling edge at the den pin. see also chapter 6.4 . figure 16 over temperature detection 6.4 infineon ? intelligent latch - faul t acknowledge and latch reset the bts50070-1ega provides infineon ? intelligent latch to avoid permanent resetting of a protective, latched switch off in pwm applications . to reset a latched protective switch off the fault has to be acknowledged by a falling edge at the den pin. for a reset signal it?s recommen ded to set the den signal to high for 20s before setting den to low for 20s. please refer to figure for details. short _circuit. emf v bb gnd in profet out v bat 10m 5uh r sc l sc lo ad short circuit l-r.emf 0 5 10 15 10 20 30 50 0 r sc l sc h m applicable impedances for: v bat v bat(sc) i l(sc) = i l(sc)high for v bb < v bb(sct) ; i l(sc) = i l(sc)low for v bb v bb(sct) ; ? j over_temp.emf t latch reset latch reset v in t v den ? jt latch reset latch t
datasheet 20 v1.1, 2011-08-16 high current profet tm smart high-side power switch bts50070-1ega protection functions infineon ? intelligent latch - fault acknowledge and latch reset 6.5 reverse polarity protection - reversave tm the device can not block a current flow in reverse battery condition. in order to minimize power dissipation, the device offers reversave tm functionality. under revers e polarity conditio n, the output sta ge will be switched on, provided a sufficient gate to source voltage is generated v gs v gnd_bb . please refer to figure 17 for details. figure 17 reverse battery protection use the following formula for estimation of overall power dissipation p diss(rev) in reverse polarity mode. note: no protection mechanism is active during reverse polarity. the control chip is not functional. potentials of logic pins can become negative. af fected pins have to be protected by means of series resistors. fault_acknowledge .emf in t v out over temp. / short circuit i bb t t t den t latch reset latch reset reverse.emf - i l - v bb control chip base chip v on(rev) load gnd out vbb v bb p diss(rev) r on(rev) i l 2 ?
datasheet 21 v1.1, 2011-08-16 high current profet tm smart high-side power switch bts50070-1ega protection functions 6.6 esd protection all logic pins have esd protection. beside the out put clamp for the power stage as described in chapter 5.5 there is a clamp mechanism implemented for pin is. see figure 18 for details. figure 18 over-voltage protection 6.7 loss of ground protection in case of complete loss of the device ground connections the bts50070-1ega securely changes to or remains in off state, if the sense resistor r is is higher than 500 . 6.8 loss of load pr otection, loss of v bb protection in case of loss of load with charged primary inductanc es the maximum supply voltage has to be limited. it is recommended to use a z-diode, a varistor ( v za <42v) or v bb clamping power switches with connected loads in parallel. in case of loss of v bb connection with charged inductiv e loads, a current path with load current capability has to be provided, to demagnetize the charged inductances. it is recommended to use a diode, a z-diode or a varistor ( v zb <16v, v zl + v d <16v, ). for higher clamp voltages currents through all pins have to be limited according to the maximum ratings. please refer to figure 19 for details. figure 19 loss of v bb in case of complete loss of v bb the bts50070-1ega remains in off state. overvoltage.emf control chip base chip gnd out v bb den is in esd protection vbb_disconnect.emf v d v zl control chip base chip load gnd out vbb logic vbb_load_disconnect.emf v zb control chip base chip load gnd out vbb logic v za
datasheet 22 v1.1, 2011-08-16 high current profet tm smart high-side power switch bts50070-1ega protection functions 6.9 electrical characteris tics: protection functions note: characteristics show the deviat ion of parameters at the given supply voltage and junction temperature. typical values show the typical param eters expected from manufacturing v bb = 9 v to 16 v, t j = -40 c to +150 c (unless otherwise specified) typical values: v bb = 13.5 v, t j = 25 c pos. parameter symbol limit values unit conditions min. typ. max. over-load protection 6.9.1 short circuit shutdown threshold (sct) t j = -40 c, t j = 25 c t j = 150 c i l(sc)high 90 90 150 135 200 170 a v in = 5 v v bb(0) < v bb(sct) 6.9.2 short circuit sh utdown threshold at high battery voltages i l(sc)low 42 70 95 a v in = 5 v v bb(0) > v bb(sct) 6.9.3 supply voltage for reduced short circuit shutdown threshold 1) v bb(sct) 20 22 25 v - 6.9.4 thermal shut down temperature t jt 150 170 1) 1) not subject to production test, specified by design -c - reverse battery 6.9.5 on-state resistance in case of reverse polarity v bb =-8v, t j =150 c 1) v bb =-12v, t j =150 c r on(rev) - - 12 14 20 23.5 m i l = -10a, r is = 1 k over-voltage 6.9.6 over-voltage pr otection sense pin v is(cl) 69.5 -v i is = -2 ma
datasheet 23 v1.1, 2011-08-16 high current profet tm smart high-side power switch bts50070-1ega diagnostic functions 7 diagnostic functions for diagnosis purposes, the bts50070-1ega provides an infineon ? enhanced sense signal at the pin is. 7.1 diagnosis enable in on-state, diagnosis is allways enabl ed. providing a low signal at the den pin will disable the reporting. in off- state, both, reporting a nd diagnosis can be disabled by a low signal at den pin. the pin is will be set to tri-state mode when a low signal is provided at the den pin. a high signal at the den pin enables the reporting and the open load and short to battery diagnos is during off mode. a falling edge at the den re sets a preceding latched output and reporting condition. please see figure 20 and table 1 for details. figure 20 block diagram: diagnosis sense.emf fault esd protection v bb r is gnd current sense out i is(fault) i l / k ilis is v is i l gnd v b,is reporting enable vbb i is 0 1 intelligent latch & open load @off detection 1 i l > i l( sc ) ? j > ? jt & 0 1 in den v ds < v ds(ol) & v ds sq rq 1 open load diagnosis i l( o l ) 01 1 &
datasheet 24 v1.1, 2011-08-16 high current profet tm smart high-side power switch bts50070-1ega diagnostic functions 7.2 diagnosis during on during normal operation, an enabled is pin provides a sens e current, which is proportional to the load current as long as v b,is >5v and as long as i is * r is < v z,is . the ratio of the output current is defined as k ilis = i l / i is . during switch- on sense current is provided after a sense settling time t sis(on) . during inverse operation and switch-off no current is provided. the output sense current is limited to i is,lim . please refer to figure 21 for details. table 1 truth table operation mode input (in) level output level diagn ostic output (is) den = h den = l normal operation (on) h ~ v bb i is = i l / k ilis z inverse operation (- i l )> v bb z short circuit to gnd z i is(fault) over temperature z i is(fault) short circuit to v bb v bb i is < i l / k ilis open load ~v bb z protective switch-o ff resulting from short circuit to gnd or over temperature 1) 1) output and fault reporting remains la tched until falling den edge acknowledge. xz i is(fault) z normal operation (off) l z z z inverse operation (- i l )> v bb i is(fault) short circuit to gnd z i is(fault) 2) , z 3) 2) before fault acknowledgement and latch reset. 3) after fault acknowledg ement and latch reset. over temperature short circuit to v bb > v bb - v ds(ol) < v bb - v ds(ol) i is(fault) z open load > v bb - v ds(ol) < v bb - v ds(ol) i is(fault) z l = low level, h = high level, z = high impedance, only le akage provided, potential depends on external circuit
datasheet 25 v1.1, 2011-08-16 high current profet tm smart high-side power switch bts50070-1ega diagnostic functions figure 21 timing of diagnosis signal in on-state the accuracy of the provided current sense ratio ( k ilis = i l / i is ) depends on the load current. please refer to figure 22 for details. a typical resistor r is of 1 k is recommended (see also chapter 6.7 ). figure 22 current sense ratio k ilis 1) the diagnosis signal can be switched off by a low signal at the diagnosis enable pin den. see figure 23 for details on the timing between the den pin and the diagnosis signal i is . please note that the diagnosis is disabled, when no signal is provided at the pin den. 1) the curves show the behavior based on characterization dat a. the marked points are described in this datasheet in section 7.5 (position 7.5.5 ). v on v in t i l1 i l2 i is1 i is2 t sis (on ) t sis (l c) i l i is 0. 9* i is 1 i i s(lim ) i is(ll) t t t normal operation switchon.emf t sis (o ff) 0.1* i is 0 20000 40000 60000 80000 0 102030405060 k ilis i l max. typ. min. a
datasheet 26 v1.1, 2011-08-16 high current profet tm smart high-side power switch bts50070-1ega diagnostic functions figure 23 timing of sense enable signal during fault condition an enabled is pin provides a defined fault current i is(fault). fault conditions are over-current, over-temperature and short circuit switch -off. any protective switch-off duri ng on-state causes a latched off of the output and report ing, until being reset by a fa lling edge at the pin den. see figure 24 for details. figure 24 fault acknowledge and latch reset 7.3 diagnosis during off during normal operation a disabled is pin provides no current. in case of shorted load to battery, open load or inverse operation an enabled is pin provides a defined fault current i is(fault) . see figure 25 for details. figure 25 fault reporting sense_enable . emf i is t den t t sis( den) t d is( den) reset protective latch f ault acknowledge@on . emf in t v out short / over temp t t den t t i is i l /k il is latch reset latch reset i is( fa u lt) fault@off.emf in t v out t den t t i is v bb - v ds(ol) i is ( fa u lt) i ol t t d(ol)
datasheet 27 v1.1, 2011-08-16 high current profet tm smart high-side power switch bts50070-1ega diagnostic functions 7.4 diagnosis disable in order to achieve minimum standby current, the in pin and the den pin have to be low level. a possible preceding fault condition and reporting has to be reset by a falling edge at the pin den. see also chapter 6.4 for details.
datasheet 28 v1.1, 2011-08-16 high current profet tm smart high-side power switch bts50070-1ega diagnostic functions 7.5 electrical characteris tics: diagnostic functions note: characteristics show the deviat ion of parameters at the given supply voltage and junction temperature. typical values show the typical param eters expected from manufacturing. v bb = 9 v to 16 v, t j = -40 c to +150 c (unless otherwise specified) typical values: v bb = 13.5 v, t j = 25 c pos. parameter symbol limit values unit conditions min. typ. max. input characteristics for diagnosis enable 7.5.1 l-input level v den(l) -0.3 - 1.0 v ? 7.5.2 h-input level v den(h) 2.0 - 5.5 v ? 7.5.3 input hysteresis v den(hys) ?100 -mv 1) 7.5.4 input pull down resistor r den 50 100 200 k ? load current sense 7.5.5 current sense ratio, static on- condition k ilis -21-k v in = v den =5v, i is < i is(lim) , v is < v z,is , v b,is >5v i l =40a i l =10a i l =5a i l =1.5a 19 18.5 16 9 21 21 21 21 23 24 28 74 v in = 0 (e.g. during de energizing of inductive loads) disabled ? ? 7.5.6 sense saturation current 1) i is(lim) 3.5 6 10 ma v den =5v, v on < 400 mv, typ. v b,is >5v 7.5.7 sense current under fault conditions i is(fault) 3.5 6 10 ma v den =5v, v b,is >5v, v on > 400 mv,typ. or v off < v ds(ol) 7.5.8 current sense leakage current i is(ll) ?0.10.5 a v in = v den =0v 7.5.9 current sense offset current t j = -40 c, t j = 25 c t j = 150 c i is(lh) ? ? 8 18 30 60 a v in = v den =5v, i l 0a 7.5.10 current sense leakage, while diagnosis disabled i is(dis) ?12 a v in = 5v, v den = 0v 7.5.11 current sense settling time to 90% i is_stat. 1) t sis(on) ?350700 s v in = 0 n 5v (switch- on), v den =5v, r l =0.5 7.5.12 current sense settling time to 10% i is_stat. 1) t sis(off) ?830 s v in = 5 p 0v (switch- off), v den = 5v, r l =0.5 7.5.13 current sense settling time to 90% i is_stat. 1) t sis(lc) ?1550 s v in = v den =5v, i l =10 n 20a 7.5.14 current sense settling time to 90% i is_stat. 1) t sis(den) ?830 s v in = 5v, out=on, v den = 0 n 5v
datasheet 29 v1.1, 2011-08-16 high current profet tm smart high-side power switch bts50070-1ega diagnostic functions 7.5.15 current sense deactivation time to 10% i is_stat. 1) t dis(den) ?220 s v in = 5v, v den = 5 p 0v open load at off state 7.5.16 open load output current i l(ol) 3510ma v in =0v, v den =5v, v ds =2v 7.5.17 open load detection threshold voltage v ds(ol) 22.83.5v v in = 0v, v den = 5v 7.5.18 open load bl anking after negative input slope 1) t d(ol) ?0.31ms v in = 5 p 0v, v den =5v, v bb = 13.5v, 1) not subject to production test, specified by design v bb = 9 v to 16 v, t j = -40 c to +150 c (unless otherwise specified) typical values: v bb = 13.5 v, t j = 25 c pos. parameter symbol limit values unit conditions min. typ. max.
datasheet 30 v1.1, 2011-08-16 high current profet tm smart high-side power switch bts50070-1ega application schematic 8 application schematic figure 26 shows an example for an application schematic. figure 26 application example note: this is a simplified example of an application circuit. the function must be verified in the real application. 8.1 hints for pcb layout ? handling of nc pins: it is recommended to connect all nc pins on a defined potential. e.g. pin 7 and pin 12 could be connected to out potent ial, while pin 5 and 6 could be connected to out or den. ? emc filter cap between vbb and gnd: it is recommended to place the filter cap as close as possible to the device to minimize the inductance of the loop. ? the resistors connecting c and in-pin as well as c and den-pin are recommended to protect the c inputs against fast electrical transients. ? ground shift: it is recommended to avoid a ground sh ift between c ground and device pin gnd of more than 0.3v during normal operation. 8.2 further application information ? please contact us to get the pin fmea ? please contact us to get a test report on shor t circuit robustness according to aec q100-012 ? please contact us for application note ?diagnosis with bts500x0-1ega? ? for further information you may contact http://www.infineon.com/ application_example.emf in vbb gnd 1k out den gnd v bat +5v is 10k c 47nf 47nf load 10k 10k bts50070-1ega
datasheet 31 v1.1, 2011-08-16 high current profet tm smart high-side power switch bts50070-1ega package outlines 9 package outlines figure 27 pg-dso-12-16 (plastic dual small outline package) green product (rohs compliant) to meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. green products are rohs-compliant (i.e pb-free finish on leads and suitable for pb-free soldering according to ipc/jedec j-std-020). 2.35 ?.1 1) does not include plastic or metal protrusion of 0.15 max. per side (heatslug) standoff index marking 1 12 2.6 max. 7.8 0 +0.1 6 7 6 1 7 12 0.8 ?.1 (1.55) 0.25 5? ?? heatslug 10.3 ?.3 0.25 b 7.5 ?.1 1) b +0.075 -0.035 0.7 ?.15 a 6.4 ?.1 1) +0.13 0.4 0.25 m a c b 12x ?.1 1.6 ?.1 4.2 5.1 ?.1 1 bottom view seating plane 12x 0.1 c c (0.2) 0.1 standout ?.05 5 x 1 = 5 0.1 pg-dso-12-4, -5, -8, -11, -12, -16-po v04 pg-dso-12-4, -5, -8, -11, -12, -16-fp v01 8.1 9.4 0.65 max. 4.5 1.67 1 you can find all of our packages, so rts of packing and others in our infineon internet page ?products?: http://www.infineon.com/products . dimensions in mm
datasheet 32 v1.1, 2011-08-16 high current profet tm smart high-side power switch bts50070-1ega revision history 10 revision history bts50070-1ega revision history: v1.1, 2011-08-16 version date changes datasheet rev. 1.1 2011-08-16 update from pro duction distribution data chapter 5.8 : parameter i bb(off) and i l(off) limits tightened for t j =150c. typical value updated. chapter 5.8 : parameter t on , t off , (d v /d t ) on and -(d v /d t ) off limits tightened. typical values updated. chapter 6.9 : parameter i l(sc)high limits tightened for t j =150c. chapter 6.9 : parameter v is(cl) limits tightened. chapter 7.5 : parameter k ilis limits tightened for i l = 5a, 10a, 40a. figure 22 updated. chapter 4.3 , chapter 6.9 : parameter numbering corrected. datasheet rev. 1.0 2009-04-06 initial version of datasheet.
edition 2011-08-16 published by infineon technologies ag 81726 munich, germany ? 8/16/11 infineon technologies ag all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infine on technologies hereby disclaims any and all warranties and liabilities of any kind, including witho ut limitation, warranties of non-infrin gement of intellectua l property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies compon ents may be used in life-su pport devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safe ty or effectiveness of that de vice or system. life support devices or systems are intended to be implanted in the hu man body or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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